Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 2, Issue 5, Pages 454-460Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jz2000112
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Funding
- Ministerio de Ciencia e Innovacion of Spain [HOPE CSD2007-00007, JES-NANOSOLAR PLE2009-0042, MAT2007-62982]
- CARIPLO Foundation [2008.2393]
- Spanish Ministerio de Ciencia e Innovacion
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The use of narrow band gap semiconductors such as PbS may expand the light absorption range to the near-infrared region in quantum-dot-sensitized solar cells (QDSCs), increasing the generated photocurrent. However, the application of PbS as a sensitizer in QDSCs causes some problems of stability and high recombination. Here, we show that the direct growth of a CdS coating layer on previously deposited PbS by the simple method of successive ionic layer adsorption and reaction (SILAR) minimizes these problems. A remarkable short-circuit current density for PbS/CdS QDSCs is demonstrated, similar to 11 mA/cm(2), compared to that of PbS QDSCs, with photocurrents lower than 4 mA/cm(2), using polysulfide electrolyte in both cells. The cell efficiency reached a promising 2.21% under 1 sun of simulated irradiation (AM1.5G, 100 mW/cm(2)). Enhancement of the solar cell performance beyond the arithmetic addition of the efficiencies of the single constituents (PbS and CdS) is demonstrated for the nanocomposite PbS/CdS configuration. PbS dramatically increases the obtained photocurrents, and the CdS coating stabilizes the solar cell behavior.
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