4.8 Article

Origin of the Enhanced Photoluminescence from Semiconductor CdSeS Nanocrystals

Journal

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 1, Issue 14, Pages 2149-2153

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jz100698m

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Funding

  1. Department of Science and Technology and Indo-French Centre, Govt. of India
  2. National J.C. Bose Fellowship

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Internal structures of extraordinarily luminescent semiconductor nanoparticles are probed with photoelectron spectroscopy, establishing a gradient alloy structure as an essential ingredient for the observed phenomenon. Comparative photoluminescence lifetime measurements provide direct evidence for a minimization of nonradiative decay channels because of the removal of interfacial defects due to a progressive change in the lattice parameters in such graded structures, exhibiting a nearly single exponential decay Quantum mechanical, calculations suggest a differential extent of spatial collapse of the electron and the hole wave functions in a way that helps to enhance the photoluminescence efficiency, while at the same time increasing the lifetime of the excited state, as observed in the experiments.

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