Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 117, Issue 22, Pages 11479-11486Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp400664r
Keywords
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Funding
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Knowledge Economy (MKE) [20113030010060, 20113010010030]
- Korea Research Council of Fundamental Science and Technology (KRCF)
- Korea Institute of Science and Technology (KIST) through the National Research Foundation of Korea [2009-0083540, 2010-0026294, 2011-0012251]
- Ministry of Education, Science and Technology
- U.S. Department of Energy, Office of Basic Energy Science [DE-AC02-06CH11357]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20113030010060] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [KRCF-협동-1301] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2011-0012251, 2010-0026294] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We characterized the electrical properties of ambipolar polymer field-effect transistors (PFETs) based on the low-band-gap polymer, pNAPDO-DPP-EH. The polymer consisted of electron-rich 2,6-di(thienyl)naphthalene units with decyloxy chains (NAPDO) and electron-deficient diketopyrrolopyrrole units with 2-ethylhexyl chains (DPP-EH). The as-spun pNAPDO-DPP-EH PFET device exhibited ambipolar transport properties with a hole mobility of 3.64 X 10(-3) cm(2)/(V s) and an electron mobility of 0.37 X 10(-3) cm(2)/(V s). Thermal annealing of the polymer film resulted in a dramatic increase in the carrier mobility. Annealing at 200 degrees C yielded hole and electron mobilities of 0.078 and 0.002 cm(2)/(V s), respectively. The mechanism by which the mobility had improved was investigated via grazing incidence X-ray diffraction studies, atomic force microscopy, and temperature-dependent transport measurements. These results indicated that thermal annealing improved the polymer film crystallinity and promoted the formation of a longer-range lamellar structure that lowered the thermal activation energy for charge hopping. Thermal annealing, moreover, reduced charge trapping in the films and thus improved the electrical stability of the PFET device. This work underscores the fact that long-range ordering in a crystalline polymer is of great importance for efficient charge transport and high electrical stability.
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