Solution-Processed High-Detectivity Near-Infrared Polymer Photodetectors Fabricated by a Novel Low-Bandgap Semiconducting Polymer

High-detectivity near-infrared (NIR) polymer photodetectors (PDs) fabricated by a novel low-bandgap semiconducting polymer blended with fullerene derivatives are reported. Operating at room temperature, the polymer PDs have a spectral response from 400 to 1100 nm. By incorporation of an alcohol/water-soluble polymer as a cathode interlayer in bulk heterojunction polymer PDs, the polymer PDs exhibit a high detectivity of 1.75 x 10(13) cm circle Hz(1/2)/W at 800 nm. These results demonstrated that the NIR polymer PDs are comparable to Si-based PDs.