Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 116, Issue 32, Pages 16951-16956Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp307185d
Keywords
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [17686056, 20360294]
- Grants-in-Aid for Scientific Research [20360294, 17686056] Funding Source: KAKEN
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V-doped TiO2(110) epitaxial films were grown on atomically flat Nb-doped TiO2 (110) single-crystal substrates by a pulsed laser deposition method, and their photoelectrochemical properties were investigated. In the photocurrent-potential curves measured in a 0.1 M HClO4 electrolyte for V-doped TiO2/Nb-doped TiO2 photoelectrodes, the photocurrent was almost proportional to the electrode potential, and there was a good linear relationship between the inverse of the photocurrent density obtained at +0.6 V versus Ag/AgCl KCl (sat.) and the V doping level. The potential at which the photocurrent appeared, that is, the flat-band potential, was about +0.33 V irrespective of the doping level, whereas it was about -0.25 V for the nondoped one. When a 0.01 M AgNO3 electrolyte was used, a sizable amount of Ag metal particles was deposited at +0.25 V on the electrode surfaces at V doping levels above 6 at %. The V-doping effects on these photoelectrochemical properties are discussed in terms of the in-gap states induced by the V impurities in TiO2 as well as their acting not only as a recombination center but also as a mediator of interfacial electron transfer.
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