Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 116, Issue 37, Pages 19748-19754Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp307951h
Keywords
-
Funding
- National Natural Science Foundation of China [50990060, 51173096]
- National Key Basic Research and Development Program of China [2009CB623604, 2011CB808403]
Ask authors/readers for more resources
The effects of trapping and scattering on the transporting properties of organic disorder semiconductors have been studied by time-of-flight (TOF) method. Tris-(8-hydroxyquinoline)-aluminum (Alq(3)), 2,2',2 ''-(1,3,5-benzene-triyl)-tris-(1-phenyl-1H-benzimid-azole) (TPBi), and N,N-diphenyl-N,N-bis(1-naphthyl)-(1,1'-bipheny1)-4,4' diamine (NPB) are doped into 4,4'-N,N'-dicarbazolebiphenyl (CBP) to form traps and scatters with various energy level differences. It is found that the low scatters significantly reduce the mobility and make the TOF transients, while the deep traps and high scatters would not significantly reduce the mobility and change the nondispersive behavior of the TOF transients. The main difference between deep traps and high scatters is that the deep traps induce a great reduction of the photocurrent, while the high scatters do not obviously decrease the photocurrent. The experimental results are well explained by the Miller Abrahams hopping model and the effective energetic disorder. Furthermore, a theoretical method is established to determine the demarcation between the shallow trap (low scatter) and the deep trap (high scatter) in terms of energy level differences. These results may shed light on the understanding of charge transport in mixed organic semiconductors.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available