Analysis of Trap State Dynamics of Single CdSe/ZnS Quantum Dots on an Indium Tin Oxide Thin Film with Applying External Electric Field

To clarify the influence of trap states on the emission dynamics of single CdSe/ZnS quantum dots on an indium tin oxide (ITO) thin film, we measured the trap state lifetimes of single quantum dots by a photon interdetection time analysis method. As the applied electric field between two separated ITO substrates was changed, we found that blinking behaviors were clearly modified, and the recovery rates from trap states were also changed; on the other hand, the excited state lifetime remained almost unchanged. From the results, we concluded that not only the excited state dynamics but also the trap state dynamics would play an important role for the blinking behavior.