Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 116, Issue 36, Pages 19512-19516Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp3030039
Keywords
-
Funding
- Core Technology Development Program for Next-generation Energy Storage of Research Institute for Solar and Sustainable Energies (RISE), GIST
- Basic Research Projects in High-tech Industrial Technology Project through a grant provided by GIST
Ask authors/readers for more resources
Although an annealing approach for bulk or thick Bi-Te material had been done for the enhancement of thermoelectric efficiency, this is the first time to report an annealing process for a Bi-Te nanostructure with a high aspect ratio. As is well-known, the Seebeck coefficient, one of the thermoelectric efficiency factors, is strongly influenced by the chemical composition of the material. However, tellurium element tends to be easily evaporated in the high-temperature range (more than 400 degrees C) due to its low melting point and high evaporation pressure. Furthermore, it is more serious in such a nanostructure with a high aspect ratio. In this article, we suggested the way to prevent the evaporation of tellurium element in the high annealing temperature range (300-623 degrees C) and investigated why the Seebeck coefficients for annealed Bi-Te nanowires were enhanced. Seebeck coefficients for Bi-Te nanowires were improved 3 times higher than those for the as-prepared ones at the optimized annealing process due to increased crystal defect concentrations, especially for edge dislocations. Consequently, this annealing process can be applied for nanostructured TE devices for the enhancement of thermopower (S).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available