4.6 Article

Structure and Photoluminescence of Pure and Indium-Doped ZnTe Microstructures

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 115, Issue 5, Pages 1415-1421

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jp1069237

Keywords

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Funding

  1. NSF of China [90606001, 20873039, 90406024, 90923014, 10974050]
  2. Hunan Provincial Natural Science Foundation [07JJ4002, 09JJ1009]
  3. New Century Excellent Talents in University [NCET-08-0182]
  4. Science and Technology Innovative Research Team in Higher Educational Instituions of Hunan Province

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High-purity and doped ZnTe microstructures were synthesized with a single thermal evaporation method. The morphology of doped ZnTe microstructures shows multilayered periodical structure, which is due to the incorporation of In elements. The PL investigation demonstrated that the pure ZnTe microstructures emit only green light (close to the bandedge) while ZnTe doped with varied In concentrations emit red or infrared light without band-edge emission. These emission changes reflected that the Donor-Acceptor pair state transition can be tuned in semiconductor microstructures for future applications.

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