ZnO Nanobridge Array UV Photodetectors

This Study describes the fabrication Of ultraviolet photodetectors with laterally aligned ZnO nanobridge arrays. These nanobridge arrays grow upward in the face-to-face direction, thereby forming biaxial compressive stress where nanobridges intersect. Compared with conventional thin-film photodetectors, the nanobridge devices markedly enhance photosensitivity and blue Shift (30 nm) of the spectral response. These phenomena are Caused by Surface effects of the ZnO nanobridge and strain-induced polarization effects, leading to band structure change. Nanobridge devices are a promising alternative for transforming advanced optoelectronic integration Circuits With a 1D Structure into Miniaturized devices.