Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 114, Issue 7, Pages 3204-3208Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp909299y
Keywords
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Funding
- Advanced Optoelectronic Technology Center
- National Cheng Kung University
- Ministry of Education and the National Science Council of Taiwan [NSC 96-2221-E-006-079-MY3]
- TDPA
- National Science Council of the Republic of China (R.O.C.) in Taiwa [TDPA 97-EC-17-A-07-S1-105, NSC 97-2623-E-168-001-IT, NSC-98-2221-E-150-005-MY3]
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This Study describes the fabrication Of ultraviolet photodetectors with laterally aligned ZnO nanobridge arrays. These nanobridge arrays grow upward in the face-to-face direction, thereby forming biaxial compressive stress where nanobridges intersect. Compared with conventional thin-film photodetectors, the nanobridge devices markedly enhance photosensitivity and blue Shift (30 nm) of the spectral response. These phenomena are Caused by Surface effects of the ZnO nanobridge and strain-induced polarization effects, leading to band structure change. Nanobridge devices are a promising alternative for transforming advanced optoelectronic integration Circuits With a 1D Structure into Miniaturized devices.
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