4.6 Article

Effects of a TiO2 Buffer Layer on Solution-Deposited VO2 Films: Enhanced Oxidization Durability

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 114, Issue 50, Pages 22214-22220

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jp108449m

Keywords

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Funding

  1. Chinese Academy of Sciences [4912009YC006]
  2. National Key Basic Research Project (NKBRP) [2009CB939904]
  3. National Natural Science Foundation of China (NSFC) [50772126]
  4. Shanghai Key Basic Research Project [09DJ1400200]
  5. Shanghai Basic Research Project [08JC1420300]
  6. Shanghai Pujiang Talent Program [09PJ1410700]

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In this article, thermochromic VO2 films were deposited on fused quartz and rutile TiO2-buffered fused quartz substrates via a solution-phase process. The incorporation of a TiO2 buffer layer endures an enhanced oxidization durability of VO2 films under an environment with high oxygen partial pressures. Oxidization in furnace during a cooling stage and rapid thermal oxidization (RTO) treatments were employed to investigate the evolution of microstructures and compositions of the films in the gradual oxidization processes. Oxidization treatments transformed VO2 into V2O5 for films grown on fused quartz substrates, whereas the oxidation process was significantly hindered for films prepared on a TiO2 buffer layer, especially around the VO2/TiO2 interface. The phenomenon is first reported in this article and is important for practical applications.

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