Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 114, Issue 31, Pages 13344-13348Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp1048716
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Funding
- Ministry of Education, Science and Technology [2010-0001950]
- Korean Government [KRF-2008-314-C00169]
- National Research Foundation of Korea [2009-0093113, 314-2008-1-C00169] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace A carbon-rich (6 root 3 x 6 root 3)R30 degrees layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (E-D) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).
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