Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 113, Issue 39, Pages 17183-17188Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp9046402
Keywords
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Funding
- National High Technology Research and Development Program of China [2007AA03Z301]
- Natural Science Foundations of China [20771032, 60806028]
- Anhui Province [070414200]
- National Basic Research Program of China [2007CB9-36001]
- Research Grants Council of Hong Kong SAR [NSFC-RGC: N_CityU125/05]
- US Army International Technology Center-Pacific
- National High-tech R&D Program of China [2006AA03Z302]
- Chinese Ministry of Education [NCEF-08-0764]
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Ternary CdSXSe1-X single-crystal nanoribbons (NRs) with uniform and controllable compositions (0 < X < 1) were synthesized for the first time via sulfurizing the CdSe nanoribbons. The product was characterized by means of X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy. Analysis results revealed that the CdSXSe1-X nanoribbons had a wurtzite structure and grew along the [0001] direction. Photoluminescence measurements showed the CdSXSe1-X NRs had tunable and sharp near-band gap emissions and lasing action from 542 to 668 nm. Metal oxide semiconductor field-effect transistor devices based on single CdS0.25Se0.75 nanoribbons showed a pronounced gating effect, a threshold voltage of 4.9 V, a transconductance of 95 nS, and an on-off ratio of 10(5). Electron mobility and carrier concentration of the CdS0.25Se0.75 NR were estimated to be 14.8 cm(2)/(V s) and 3.9 x 10(16) cm(-3), respectively.
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