Synthesis of CdSXSe1-X Nanoribbons with Uniform and Controllable Compositions via Sulfurization: Optical and Electronic Properties Studies

Ternary CdSXSe1-X single-crystal nanoribbons (NRs) with uniform and controllable compositions (0 < X < 1) were synthesized for the first time via sulfurizing the CdSe nanoribbons. The product was characterized by means of X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy. Analysis results revealed that the CdSXSe1-X nanoribbons had a wurtzite structure and grew along the [0001] direction. Photoluminescence measurements showed the CdSXSe1-X NRs had tunable and sharp near-band gap emissions and lasing action from 542 to 668 nm. Metal oxide semiconductor field-effect transistor devices based on single CdS0.25Se0.75 nanoribbons showed a pronounced gating effect, a threshold voltage of 4.9 V, a transconductance of 95 nS, and an on-off ratio of 10(5). Electron mobility and carrier concentration of the CdS0.25Se0.75 NR were estimated to be 14.8 cm(2)/(V s) and 3.9 x 10(16) cm(-3), respectively.