Synthesis of High Quality n-type CdSe Nanobelts and Their Applications in Nanodevices

Cd-enriched ambient, high quality n-type CdSe nanobelts (NBs) with various electron concentrations (from similar to 10(16) to 10(18) cm(-3)), which can meet different device requirements, were synthesized via the chemical vapor deposition (CVD) method. The electron mobilities are much higher than those reported previously for CdSe one-dimensional (1D) nanostructures. High performance single CdSe NB field effect transistors (NB-FETs) and CdSe NB/p(+)-Si heterojunction light emitting diodes (HLEDs) are fabricated and studied. The NB-FETs have the best performance among the reported CdSe 1D nano-FETs with an on-off ratio of similar to 3 x 10(8), a threshold voltage of similar to-4.1 V, and a maximum transconductance of similar to 1.49 mu S. The room temperature electroluminescence spectra of the HLEDs consist of only an intense CdSe band-edge emission peak (similar to 708 nm) with a full width at half-maximum of about 29 nm.