Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 113, Issue 38, Pages 16565-16567Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp906066z
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Funding
- U.K. Engineering and Physical Sciences Research Council [EP/C534158/1]
- Engineering and Physical Sciences Research Council [EP/C534158/1] Funding Source: researchfish
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Graphene films have been formed by annealing Ni thin films at 800 degrees C under vacuum conditions. The Ni thin films are deposited on Si/SiO2 and, following annealing, have a polycrystalline morphology with grain sizes on the order of 1 mu m. Following growth, the Ni is removed by etching, and the graphene is transferred as a single continuous layer onto a separate surface. The fraction of monolayer graphene is investigated using optical and electron microscopy and Raman spectroscopy and is shown to be >75%.
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