Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 113, Issue 38, Pages 16796-16801Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp9046038
Keywords
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Funding
- Ministry of Science and Technology [2006CB932401]
- National Science Foundation of China [90606026]
- RGC of HKSAR [402007, 414908]
- CUHK Focused Investments Scheme C
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A significant visible light response of unintentionally doped ZnO nanowire (NW) field effect transistors (FETs) has been observed in a reversible manner (for illumination source on and off). In particular, under white light illumination (wavelength longer than 400 nm), the threshold voltage (V-T) of the ZnO NW FET shifts greatly to the negative direction, suggesting a remarkable increase in carrier concentration. A photon-assisted oxygen molecule desorption mechanism is proposed to explain the observed sub-bandgap photoresponse on the basis of the behavior of the experimental devices in different gas atmospheres (air, vacuum, pure N-2, and pure O-2) and with/without nanowire surface modifications (coated with PMMA).
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