4.6 Article

Ti5Si4 Nanobats with Excellent Field Emission Properties

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 113, Issue 21, Pages 9153-9156

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jp902082x

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Funding

  1. Republic of China National Science Council [NSC 96-2221-E-007-169-MY3, NSC 97-2120-M-007-003]

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Bat-shaped nanorods (nanobats) of Ti5Si4 were grown on titanium foil by a vapor and condensation method without catalysts. The average diameter of the heads and the tails of the nanobats as well as the length of the nanobats are 25, 15, and 350 nm, respectively. The resistivity of the Ti5Si4 nanobat was measured to be 348 Omega mu.cm. Excellent field emission properties were found with the turn-on voltage of the Ti5Si4 nanobats at the current density of 1 mu A/cm(2) being 1.47 V/mu m and field amplification factor being as high as 1350. The possession of remarkable field emission properties indicates that the Ti5Si4 nanobats may be applicable as emitters in flat panel display and vacuum microelectronic devices.

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