Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 113, Issue 33, Pages 14633-14637Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp903079c
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Funding
- Natural Science Foundation of China [10574122, 50772110, 50721091]
- National Basic Research Program of China [2006CB922000, 2009CB939901, 2007CB925202]
- CAS [KJCX2.YW.W06-3]
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Zn-doped gallium nitride (GaN) nanotubes with zigzag morphology have been synthesized by a chemical vapor deposition method. A single-crystalline zigzag nanotube consists of two building blocks with equivalent growth directions, hexagonal cross sections, and about 10 nm wall thicknesses. The formation of the nanotube is attributed to the reduction of electrostatic interaction energy caused by the polar side surfaces of GaN. A room temperature photoluminescence spectrum of Zn-doped GaN nanotubes with zigzag morphology shows two peaks at 2.97 and 2,16 eV, respectively.
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