4.6 Article

Enhancement of field-effect mobility and stability of poly(3-hexylthiophene) field-effect transistors by conformational change

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 112, Issue 5, Pages 1705-1710

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jp077125b

Keywords

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Funding

  1. Korea Evaluation Institute of Industrial Technology (KEIT) [B0008557] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  2. National Research Foundation of Korea [과C6A1906, R11-2003-006-05004-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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With the aim of enhancing the field-effect mobility and air stability of self-aligned regioregular poly(3-hexylthiophene), P3HT, by promoting two-dimensional molecular ordering, we transformed the chemical structure of the P3HT chain from a benzoid to a quinoid structure by doping the P3HT solution with HAuCl4 prior to film formation. We found that, for the appropriate HAuCl4 concentration, the P3HT nanocrystals adopt a highly ordered molecular structure with a field-effect mobility of 0.03 cm(2) V-1 s(-1), which is an improvement by a factor of more than 100. This increase in field-effect mobility is due to a significant enhancement of molecular ordering and the perpendicular orientation of the nanocrystals with respect to the insulator substrate. This resulted from the change in the P3HT chain conformation from a benzoid to a quinoid structure due to oxidation by HAuCl4. The quinoid structure favors a linear or expanded-coil conformation, so the thiophene inter-ring bonds have increased double-bond character, which improves the molecular ordering. Furthermore, the electrical properties of a doped P3HT device had highly improved stability to air without encapsulation. These results suggest that the effect of unintentional doping by oxygen on HALICl(4)-doped P3HT film is insignificant because the p-type doping effect of HAuCl4 is the major contributor.

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