4.6 Article

Effects of 1 MeV electron beam irradiation on multilayer graphene grown on 6H-SiC(0001)

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 112, Issue 34, Pages 13062-13064

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jp805141e

Keywords

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Funding

  1. Ministry of Science and Technology (MOST) of Korea [MOST-2007-01156]
  2. Center of Fusion Technology for Security
  3. MOST/KOSEF [R11-2001-00002-0]
  4. national R&D Projects for Nano Science and Technology Korea Research [KRF-2005-070-C00063]
  5. Brain Korea 21 project [KRF-2006-312-C00565]
  6. Korean Government [KRF-2006-311-C00307]
  7. POSTECH
  8. National Research Foundation of Korea [과06A1506, 2005-070-C00063, 2007-01156, R11-2001-091-00002-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Graphene layers grown on 6H-SiC(0001) were irradiated with 1 MeV electron beam to functionalize its surface. A surface analysis using atomic force microscopy, the near edge X-ray adsorption fine structure spectra of C K-edge, and photoemission spectroscopy suggests that the electron beam irradiation in ambient condition can induce oxidation of the graphene layer.

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