Simulation of Hole Mobility in α-Oligofuran Crystals

We investigated oligofuran (nF) (n = 3, 4, 6) heterocyclic oligomers as p-type organic semiconductor materials, based on quantum chemistry calculations combined with the Marcus Hush electron transfer theory. It was found that 6F single crystal, with a structure similar to that of 6T, possesses high hole-transfer mobility, which is nearly 17 times larger than that of 6T single crystal. In addtion, the ionization potential (IP) value of 6F is about 5.60 eV, that is, slightly smaller than the IP value of 6T (5.74 eV). The relatively small IP values ensure effective hole injection from the source electrode. Considering that 6T and functional oligothiophenes are active p-type semiconducting materials widely used in organic electronic devices, nFs and nF-based molecules have the potential to be developed as potential high efficiency p-type organic semiconducting materials.