Journal
JOURNAL OF PHYSICAL CHEMISTRY B
Volume 114, Issue 16, Pages 5315-5319Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp100928d
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [20721061, 20872146, 50725311]
- NSFC-DFG [TRR61]
- Ministry of Science and Technology of China [2006CB806200, 2006CB932100, 2009CB930400]
- Chinese Academy of Sciences
Ask authors/readers for more resources
A novel covalence-linked PMMA-SiO2 hybrid nanodielectrics was prepared by grafting similar to 10 nm PMMA brush onto the SiO2 (similar to 9 nm) surface, which effectively combines the respective merits of PMMA and SiO2. As a result, the hybrid nanodielectrics exhibit excellent dielectric performance (e.g., low leakage density (<10(-7) A/cm(2) at 6 MV/cm), high breakdown voltage (7 MV/cm), high capacitance (142 nF/cm(2)), good operational stability, and good compatibility with organic semiconductors), and enable organic field-effect transistors (OFETs) to work with high performance and low voltage. These results may open a way to build ultrathin dielectrics for high performance transistor and circuit, as well as for microelectronics, nanoelectronics, and organic electronics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available