4.6 Article

Structure Assignment, Electronic Properties, and Magnetism Quenching of Endohedrally Doped Neutral Silicon Clusters, SinCo (n=10-12)

Journal

JOURNAL OF PHYSICAL CHEMISTRY A
Volume 118, Issue 37, Pages 8198-8203

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jp500928t

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Funding

  1. European Community [226716]
  2. Research Foundation-Flanders (FWO)
  3. KU Leuven Research Council (GOA program)
  4. Deutsche Forschungsgemeinschaft [FOR 1282, FI 893/4-2]

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The structures of neutral cobalt-doped silicon clusters have been assigned by a combined experimental and theoretical study. Size-selective infrared spectra of neutral SinCo (n = 10-12) clusters are measured using a tunable IR-UV two-color ionization scheme. The experimental infrared spectra are compared with calculated spectra of low-energy structures predicted at the B3P86 level of theory. It is shown that the SinCo (n = 10-12) clusters have endohedral caged structures, where the silicon frameworks prefer double-layered structures encapsulating the Co atom. Electronic structure analysis indicates that the clusters are stabilized by an ionic interaction between the Co dopant atom and the silicon cage due to the charge transfer from the silicon valence sp orbitals to the cobalt 3d orbitals. Strong hybridization between the Co dopant atom and the silicon host quenches the local magnetic moment on the encapsulated Co atom.

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