Journal
JOURNAL OF PHYSICAL CHEMISTRY A
Volume 117, Issue 39, Pages 9454-9461Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp311757r
Keywords
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Funding
- National Science Council of Taiwan [NSC 101-2627-M-002-004]
- National Taiwan University
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We present a chemical vapor deposition (CVD) method to catalytically synthesize large-area, transferless, single- to few-layer graphene sheets using hexamethyldisilazane (HMDS) on a SiO2/Si substrate as a carbon source and thermally evaporated alternating Ni/Cu/Ni layers as a catalyst. The as-synthesized graphene films were characterized by Raman spectroscopic imaging to identify single- to few-layer sheets. This HMDS-derived graphene layer is continuous over the entire growth substrate, and single- to trilayer mixed sheets can be up to 30 mu m in the lateral dimension. With the synthetic CVD method proposed here, graphene can be grown into tailored shapes directly on a SiO2/Si surface through vapor priming of HMDS onto predefined photolithographic patterns The transparent and conductive HMDS-derived graphene exhibits its potential for widespread electronic and opto-electronic applications
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