4.6 Article

The photoelectrochemical performances of Sb-doped AgIn5S8 film electrodes prepared by chemical bath deposition

Journal

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jphotochem.2008.11.018

Keywords

Photoelectrochemical reaction; Optical property; Crystalline; Electrode

Funding

  1. National Science Council [NSC 95-2218-E-182-003-MY2, NSC-96-ET-7-194-002-ET]
  2. Bureau of Energy, Ministry of Economic Affairs [6455DC5210]

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The Sb-doped AgIn5S8 films were grown on indium-tin-oxide substrates using chemical bath deposition. The X-ray diffraction patterns of samples show the polycrystalline AgIn5S8 phase in these films. With the molar ratio of Sb/Ag in the Solution higher than 0.2, the conduction type of samples turns into p-type. The thickness, energy band gaps, and carrier densities of these samples are in the range of 692-1119 nm, 1.71-1.73 eV and 5.75 x 10(14) to 9.85 x 10(14) cm(-3), respectively. The maximum photocurrent density of samples with external potential kept at 1.0 V vs. an Ag/AgCl reference electrode was found to be -2.73 mA/cm(2) under illumination using a 300 Xe lamp system. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

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