Journal
PHYSICAL REVIEW B
Volume 91, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.91.121408
Keywords
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Funding
- French Ministry of Defense through ERE Grant from the Direction Generale de l'Armement (DGA) [2014.60.0082]
- US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering
- US Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- Lockheed Martin Corporation
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The physics of the epsilon-near-zero (ENZ) mode, which is supported by a nanolayer at the frequency where the dielectric permittivity vanishes, has recently been a subject of debate. In this Rapid Communication, we thoroughly investigate and clarify the physics of this mode, providing its main characteristics and its domain of existence. This understanding will benefit all the applications that rely on ENZ modes in semiconductor nanolayers, including directional perfect absorption, voltage-tunable devices, and ultrafast thermal emission.
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