4.6 Article

Switchable conductivity at the ferroelectric interface: Nonpolar oxides

Journal

PHYSICAL REVIEW B
Volume 91, Issue 11, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.91.115126

Keywords

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Funding

  1. National Science Foundation [DMR-1207342]
  2. Air Force Office of Scientific Research [FA9550-12-10494]
  3. Direct For Mathematical & Physical Scien
  4. Division Of Materials Research [1207342] Funding Source: National Science Foundation

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We investigate theoretically the interface between a ferroelectric BaTiO3 film and a nonpolar insulating SrTiO3 substrate. We find that thin BaTiO3 (under 5 nm) can stabilize a nonpolarized state, and an additional metastable polarized state. While the nonpolarized state is insulating, for the polarized heterostructure, we discover the existence of two-dimensional charge carrier gases. In this case, the heterostructure undergoes an electronic reconstruction in order to prevent the polar catastrophe. The two-dimensional gases, formed as a result, screen the polarization, leading to a substantially reduced potential drop across the ferroelectric film. We emphasize that the two-dimensional electron and hole gases are created by the polarization of the sample, and are not due to the polar nature of the material or to doping.

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