4.6 Article

Phosphorene oxides: Bandgap engineering of phosphorene by oxidation

Journal

PHYSICAL REVIEW B
Volume 91, Issue 8, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.91.085407

Keywords

-

Funding

  1. National Science Foundation [CHE-1301157]
  2. Banco Santander [CMMI-1036460]
  3. National Research Foundation, Prime Minister's Office, Singapore, under its Medium Sized Centre Programme and Competitive Research Program award [R-144-000-295-281]
  4. Direct For Mathematical & Physical Scien
  5. Division Of Chemistry [1301157] Funding Source: National Science Foundation

Ask authors/readers for more resources

We show that oxidation of phosphorene can lead to the formation of a new family of planar (two-dimensional) and tubular (one-dimensional) oxides and suboxides, most of them insulating. This confers to black phosphorus a native oxide that can be used as barrier material and protective layer. Furthermore, the bandgap of phosphorene oxides depends on the oxygen concentration, suggesting that controlled oxidation can be used as a means to engineer the bandgap. For the oxygen saturated composition, P2O5, both the planar and tubular phases have a large bandgap energy of about 8.5 eV and are transparent in the near UV. These two forms of phosphorene oxides are predicted to have the same formation enthalpy as O'-P2O5, the most stable of the previously known forms of phosphorus pentoxide.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available