Journal
PHYSICAL REVIEW B
Volume 92, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.92.241305
Keywords
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Funding
- European Union Marie Curie Program [334324]
- Max Planck Society
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Commonly, excitons in semiconductors are regarded as a low-temperature, low carrier density phenomenon, becoming unstable as the temperature and carrier density increase. Contrary to the common expectation, our ultrafast conductivity and luminescence measurements in GaInN/GaN quantum wells reveal a highly efficient formation of radiative excitons from a high-density electron-hole plasma at room temperature, and provide a quantitative measure of the exciton fraction to reach more than 40% at a total carrier population as high as similar to 10(13) cm(-2). Driven by the mass action of electrons and holes, this effect is believed to contribute to the extraordinarily high quantum efficiency of group-III nitride light emitters.
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