Journal
PHYSICAL REVIEW B
Volume 91, Issue 22, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.91.224413
Keywords
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Funding
- Nanoelectronics Research Initiative (NRI) through the Institute for Nanoelectronics Discovery and Exploration (INDEX)
- National Science Foundation [DMR-1307056]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1307056] Funding Source: National Science Foundation
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Using an optimized fabrication and magnetic thermal annealing process, we have obtained a high quality beta-Ta/CoFeB/MgO layered structure with strong spin-orbit coupling. We have studied electron transport, magnetotransport, and magnetic properties of this system over a wide temperature range between 5 and 300 K. We present the results of resistivity, magnetization, giant spin Hall effect (GSHE), perpendicular magnetic anisotropy, and magnetic switching phase diagram. beta-Ta exhibits a large spin Hall angle of 0.14, and shows evidence of spin Hall angle's scaling with resistivity quadratically. The optimized beta-Ta/CoFeB/MgO system displays the lowest switching current density among similar systems. Our comprehensive study will benefit applications of GSHE in spintronics.
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