Journal
PHYSICAL REVIEW B
Volume 91, Issue 18, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.91.180402
Keywords
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Funding
- EU European Research Council (ERC) Advanced Grant [268066]
- Ministry of Education of the Czech Republic [LM2011026]
- Grant Agency of the Czech Republic [14-37427G]
- European Research Council (ERC) [268066] Funding Source: European Research Council (ERC)
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First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead nonrelativistic spin transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin torques requiring no reference ferromagnet. Here we report the observation of a counterpart magnetoresistance effect in such a relativistic system which allows us to electrically detect the sign of the magnetization without an auxiliary magnetic field or ferromagnet. We observe the effect in a geometry in which the magnetization of a uniaxial (Ga,Mn) As epilayer is set either parallel or antiparallel to a current-induced nonequilibrium spin polarization of carriers. In our structure, this linear-in-current magnetoresistance reaches 0.2% at current density of 10(6) A cm(-2).
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