Journal
PHYSICAL REVIEW B
Volume 91, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.91.165432
Keywords
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Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Canadian Institute for Advanced Research (CIFAR)
- Fonds de Recherche du Quebec-Nature et Technologies (FRQNT)
- Institut transdisciplinaire d'information quantique (INTRIQ)
- Walter C. Sumner Foundation
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Several experiments have shown qubit coherence decay of the form exp[-(t/T-2)(alpha)] due to environmental charge-noise fluctuations. We present a microscopic description for temperature dependencies of the parameters T-2 and alpha. Our description is appropriate to qubits in semiconductors interacting with spurious two-level charge fluctuators coupled to a thermal bath. We find distinct power-law dependencies of T-2 and alpha on temperature depending on the nature of the interaction of the fluctuators with the associated bath. We consider fluctuator dynamics induced by first-and second-order tunneling with a continuum of delocalized electron states. We also study one-and two-phonon processes for fluctuators in either GaAs or Si. These results can be used to identify dominant charge-dephasing mechanisms and suppress them.
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