4.6 Article

Band gap engineering of bulk and nanosheet SnO: an insight into the interlayer Sn-Sn lone pair interactions

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 17, Issue 27, Pages 17816-17820

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cp02255j

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Funding

  1. Japan Science and Technology Agency (JST) Precursory Research for Embryonic Science and Technology (PRESTO) program
  2. World Premier International Research Center Initiative on Materials Nanoarchitectonics (MANA), MEXT

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The effects of interlayer lone-pair interactions on the electronic structure of SnO are explored using density-functional theory. Our comprehensive study reveals that the band gap of SnO opens with the increase in the interlayer Sn-Sn distance. The effect is rationalized by the character of band edges which consist of bonding and anti-bonding states from interlayer lone pair interactions. The band edges for several nanosheets and strained double-layer SnO are estimated. We conclude that the double-layer SnO is a promising material for visible-light driven photocatalysts for hydrogen evolution.

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