Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 17, Issue 7, Pages 4937-4944Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cp04902k
Keywords
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Funding
- National Key Basic Research Program (973 project) [2012CB932903, 2012CB932904]
- Beijing Science and Technology Committee [Z131100006013003]
- NSFC [51372270, 51372272, 11474333, 91233202, 21173260]
- Knowledge Innovation Program of the Chinese Academy of Sciences
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An ultrathin AlOx layer has been deposited onto a CH3NH3PbI3 film using atomic layer deposition technology, to construct a metal-insulator-semiconductor (MIS) back contact for the hole-transporting material-free perovskite solar cell. By optimization of the ALD deposition cycles, the average power conversion efficiency (PCE) of the cell has been enhanced from 8.61% to 10.07% with a highest PCE of 11.10%. It is revealed that the improvement in cell performance with this MIS back contact is mainly attributed to the enhancement in charge collection resulting from the electron blocking effect of the AlOx layer.
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