Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 17, Issue 2, Pages 1099-1105Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cp04775c
Keywords
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Funding
- National Natural Science Foundation of China [51222212, 21403109, 61222403]
- CAEP foundation [2012B0302052]
- MOST of China (973 Project) [2011CB922200]
- National 973 project from National Basic Research Program of China [2014CB931700]
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The first-principles calculations are performed to investigate the electronic properties and the atomic mechanism of the single layer MoS2 or WS2 homo-junction structure. The results reveal that both the stability and electronic structure of the homo-junction structure are greatly affected by the type of boundaries, which connect the different phase structures, either the semiconducting hexagonal (H) structure or the metallic trigonal (T) structure. Through tuning the size of the lateral homo-junction structure of either MoS2 or WS2, the phase transformation between H and T can occur. Interestingly, the electronic structures of homo-junction structures can be tuned between the metal and the semiconductor by changing the size of the nanoribbons.
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