Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 17, Issue 14, Pages 8627-8632Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cp04903a
Keywords
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Funding
- China's National 973 Program [2011CBA00604, 2011CB933004]
- National Science Foundation of China [61076115]
- Semiconductor Research Corporation (SRC)
- Lam Research in the U.S. [2224.001]
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The growth dynamics for metallic filaments in conductive-bridge resistive-switching randomaccessmemory (CBRAM) are studied using the kinetic Monte Carlo (KMC) method. The physical process at the atomistic level is revealed in explaining the experimental observation that filament growth can originate at either the cathode or the anode. The statistical nature of the filament growth is best shown by the random topography of dendrite-like conductive paths obtained. Critical material properties, such as charged-particle mobility in the switching layer of a solid electrolyte or a dielectric, are mapped to KMC model parameters through activation energy, etc. The accuracy of the simulator is established by the good agreement between the simulated forming time and the measured data.
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