Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 9, Issue 8, Pages 462-465Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201510165
Keywords
GaN; doping; first-principles calculations; AlGaN; electrical conductivity
Funding
- Center for Low Energy Systems Technology (LEAST)
- one of six SRC STARnet Centers - MARCO
- DARPA
- NSF [DMR-1434854]
- ONR Dielectric Enhancements for Innovative Electronics MultidisciplinaryUniversity Initiative [N00014-10-1-0937]
- U.S. Department of Energy at Lawrence Livermore National Laboratory [DE-AC52-07NA27344]
- Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
- Direct For Mathematical & Physical Scien [1434854] Funding Source: National Science Foundation
- Division Of Materials Research [1434854] Funding Source: National Science Foundation
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Achieving high levels of n-type conductivity in AlN and high Al-content nitride alloys is a long standing problem; significant decreases in conductivity are observed as the Al content is increased, a phenomenon that has been attributed to donors such as oxygen or silicon forming DX centers. We address this problem through a comprehensive first-principles hybrid density functional study of potential n-type dopants, identifying SN and SeN as two elements which are potential shallow donors because they do not undergo a DX transition. In particular, SN is highly promising as an n-type dopant because it also has a low formation energy and hence a high solubility. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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