4.7 Article

Study of the absorption edge of SnO2 nanoparticles embedded in silica films

Journal

JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 357, Issue 8-9, Pages 1888-1891

Publisher

ELSEVIER
DOI: 10.1016/j.jnoncrysol.2010.12.045

Keywords

Absorption edge; Wide band gap semiconductor; Nanostructures; Silica film; Sol-gel

Funding

  1. Cariplo Foundation, Italy [20060656]

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Silica thin films with embedded SnO2 nanoparticles have been grown on transparent substrates by the sol-gel method. Tin dioxide crystals with cassiterite structure are semiconductors with a wide band gap of similar to 3.6 eV. Optical absorption spectroscopy in the near ultraviolet-visible range has been exploited to probe nanostructuring features of such nanocrystals. The results show that the sintering conditions modify crystallite mean size and enable the occurrence of quantum confinement effects. The outcome is in accordance with transmission electron microscopy data conducted on analogous bulk samples. (C) 2011 Elsevier B.V. All rights reserved.

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