Related references
Note: Only part of the references are listed.Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals
J. Buckeridge et al.
PHYSICAL REVIEW LETTERS (2015)
Origins of optical absorption and emission lines in AlN
Qimin Yan et al.
APPLIED PHYSICS LETTERS (2014)
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
Benjamin E. Gaddy et al.
APPLIED PHYSICS LETTERS (2014)
Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors
J. L. Lyons et al.
JOURNAL OF APPLIED PHYSICS (2014)
Effects of strain on the band structure of group-III nitrides
Qimin Yan et al.
PHYSICAL REVIEW B (2014)
First-principles theory of nonradiative carrier capture via multiphonon emission
Audrius Alkauskas et al.
PHYSICAL REVIEW B (2014)
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
J. L. Lyons et al.
PHYSICAL REVIEW B (2014)
Thermodynamics and Kinetics of Three Mg-H-VN Complexes in Mg:GaN from Combined First-Principles Calculation and Experiment
Donghwa Lee et al.
PHYSICAL REVIEW LETTERS (2014)
First-principles calculations for point defects in solids
Christoph Freysoldt et al.
REVIEWS OF MODERN PHYSICS (2014)
Carrier-capture characteristics of point defects in GaN and ZnO
Michael A. Reshchikov
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 (2014)
Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN
John L. Lyons et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Blue luminescence and Zn acceptor in GaN
D. O. Demchenko et al.
PHYSICAL REVIEW B (2013)
Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes
D. O. Demchenko et al.
PHYSICAL REVIEW LETTERS (2013)
Ab-initio study of Mg-doped InN(0001) surface
A. Belabbes et al.
AIP ADVANCES (2013)
Diffusion and Stability of Hydrogen in Mg-Doped GaN: A Density Functional Study
Ji-Sang Park et al.
APPLIED PHYSICS EXPRESS (2012)
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramon Collazo et al.
APPLIED PHYSICS LETTERS (2012)
Role of nitrogen vacancies in the luminescence of Mg-doped GaN
Qimin Yan et al.
APPLIED PHYSICS LETTERS (2012)
Hybrid functional calculations of native point defects in InN
A. Janotti et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2012)
Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides
M. A. Caro et al.
PHYSICAL REVIEW B (2012)
Optical signature of Mg-doped GaN: Transfer processes
G. Callsen et al.
PHYSICAL REVIEW B (2012)
Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors
Lin Shi et al.
PHYSICAL REVIEW LETTERS (2012)
First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
Audrius Alkauskas et al.
PHYSICAL REVIEW LETTERS (2012)
Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors
John L. Lyons et al.
PHYSICAL REVIEW LETTERS (2012)
Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes
A. Castiglia et al.
APPLIED PHYSICS LETTERS (2011)
Electrostatic interactions between charged defects in supercells
Christoph Freysoldt et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2011)
Bound states of the Fe impurity in wurtzite GaN from hybrid density-functional calculations
Paola Alippi et al.
PHYSICAL REVIEW B (2011)
Group-II acceptors in wurtzite AlN: A screened hybrid density functional study
Aron Szabo et al.
APPLIED PHYSICS LETTERS (2010)
Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state
Stephan Lany et al.
APPLIED PHYSICS LETTERS (2010)
Carbon impurities and the yellow luminescence in GaN
J. L. Lyons et al.
APPLIED PHYSICS LETTERS (2010)
Controlling the conductivity of InN
C. G. Van de Walle et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Accurate defect levels obtained from the HSE06 range-separated hybrid functional
Peter Deak et al.
PHYSICAL REVIEW B (2010)
Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals
S. J. Clark et al.
PHYSICAL REVIEW B (2010)
Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy
Barbara Bastek et al.
APPLIED PHYSICS LETTERS (2009)
Defect complexes and cluster doping of InN: First-principles investigations
X. M. Duan et al.
PHYSICAL REVIEW B (2009)
Evidence for Two Mg Related Acceptors in GaN
B. Monemar et al.
PHYSICAL REVIEW LETTERS (2009)
Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
Christoph Freysoldt et al.
PHYSICAL REVIEW LETTERS (2009)
Sources of unintentional conductivity in InN
Anderson Janotti et al.
APPLIED PHYSICS LETTERS (2008)
Validity of the Slater-Janak transition-state model within the LDA+U approach
Simone Sanna et al.
PHYSICAL REVIEW B (2008)
Stabilization of Bulk p-Type and Surface n-Type Carriers in Mg-Doped InN {0001} Films
Jung-Hwan Song et al.
PHYSICAL REVIEW LETTERS (2008)
Defect energy levels in density functional calculations: Alignment and band gap problem
Audrius Alkauskas et al.
PHYSICAL REVIEW LETTERS (2008)
Electronic structure of defect states in hydroxylated and reduced rutile TiO2(110) surfaces
Cristiana Di Valentin et al.
PHYSICAL REVIEW LETTERS (2006)
Hybrid functionals based on a screened Coulomb potential (vol 118, pg 8207, 2003)
Jochen Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2006)
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu et al.
NATURE (2006)
Screened hybrid density functionals applied to solids -: art. no. 154709
J Paier et al.
JOURNAL OF CHEMICAL PHYSICS (2006)
Evidence for p-type doping of InN
RE Jones et al.
PHYSICAL REVIEW LETTERS (2006)
Luminescence properties of defects in GaN -: art. no. 061301
MA Reshchikov et al.
JOURNAL OF APPLIED PHYSICS (2005)
First-principles calculations for defects and impurities: Applications to III-nitrides
CG Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2004)
Luminescence in GaN co-doped with carbon and silicon
CH Seager et al.
JOURNAL OF LUMINESCENCE (2004)
Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy
DS Green et al.
JOURNAL OF APPLIED PHYSICS (2004)
Hybrid functionals based on a screened Coulomb potential
J Heyd et al.
JOURNAL OF CHEMICAL PHYSICS (2003)
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
S Heikman et al.
APPLIED PHYSICS LETTERS (2002)
Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
PB Klein et al.
APPLIED PHYSICS LETTERS (2001)
First-principles studies of beryllium doping of GaN
CG Van de Walle et al.
PHYSICAL REVIEW B (2001)
Investigation of beryllium implanted P-type GaN
CC Yu et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2001)
Hole trapping at Al impurities in silica: A challenge for density functional theories
J Laegsgaard et al.
PHYSICAL REVIEW LETTERS (2001)
Theoretical description of hole localization in a quartz Al center: The importance of exact electron exchange
G Pacchioni et al.
PHYSICAL REVIEW B (2001)
Magnesium incorporation in GaN grown by molecular-beam epitaxy
AJ Ptak et al.
APPLIED PHYSICS LETTERS (2001)
Native defects and impurities in InN:: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials
C Stampfl et al.
PHYSICAL REVIEW B (2000)