Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 252, Issue 5, Pages 900-908Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201552062
Keywords
acceptors; doping; first-principles calculations; impurities; luminescence; nitride semiconductors
Categories
Funding
- ONR DE-FINE MURI [N00014-10-1-0937]
- Office of Science of the U.S. Department of Energy [DE-SC0010689]
- Center for Low Energy Systems Technology (LEAST), one of six SRC STARnet Center - MARCO
- Center for Low Energy Systems Technology (LEAST), one of six SRC STARnet Center - DARPA
- DOE Office of Science [DE-AC02-05CH11231]
Ask authors/readers for more resources
Acceptor defects and impurities play a critical role in the performance of GaN-based devices. Mg is the only acceptor impurity that gives rise to p-type conductivity, while other acceptors (such as C-N impurities and V-Ga defects) act as sources of compensation and trapping. From the point of view of theory, understanding the physics of acceptor species in GaN has long been a challenge. In the past, limitations of computational techniques made it difficult to quantitatively predict crucial quantities such as thermodynamic and optical transition levels. However, advances in first-principles calculations, including the use of hybrid functionals in density functional theory, have led to a resurgence in efforts to understand properties of acceptors in nitrides. After briefly discussing advances in theoretical techniques, we review recent computational work on acceptor impurities in GaN and compare theoretical results with the available experimental data. We also present new hybrid density functional calculations on the transition levels of V-Ga and its complexes with O and H impurities. The results indicate that donor impurities significantly lower V-Ga transition levels, and that V-Ga-3H and V-Ga-O-N-2H complexes give rise to yellow luminescence. We also discuss the properties of acceptor impurities in AlN and InN. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available