Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 354, Issue 19-25, Pages 2253-2257Publisher
ELSEVIER
DOI: 10.1016/j.jnoncrysol.2007.09.073
Keywords
silicon; Raman scattering; chemical vapor deposition; atomic force and scanning tunneling microscopy; Raman spectroscopy
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Raman spectra of the mixed phase silicon films were studied for a sample with transition from amorphous to fully microcrystalline structure using four excitation wavelengths (325, 514.5, 632.8 and 785 nm). Factor analysis showed the presence of two and only two spectrally independent components in the spectra within the range from 250 to 750 cm(-1) for all four excitation wavelengths. The 785 nm excitation was found optimal for crystallinity evaluation and by comparison with surface crystallinity obtained by atomic force microscopy, we have estimated the ratio of integrated Raman cross-sections of microcrystalline and amorphous silicon at this wavelength as y = 0.88 +/- 0.05. (c) 2007 Elsevier B.V. All rights reserved.
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