Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 354, Issue 19-25, Pages 2673-2678Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2007.09.055
Keywords
sychrotron radiation; chalcogenides; laser-matter interactions; X-ray fluorescence; photo-induced effects; structure; short-range order; X-ray absorption
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In situ EXAFS measurements have been performed to study the changes in the local structure of a-As2S3 (around As and S K-edges) and a-GeSe2 (around Ge and Se K-edges) thin films. To study the effect of illumination on the local structure and environment, the structural parameters (nearest neighbor distances, Debye-Waller factor) are estimated for as-deposited films, during illumination and after illumination for both these compositions. For As2S3 films, there is an expansion in the sulfur nearest neighbor distances and a small contraction in the Arsenic nearest neighbor distance during illumination. For GeSe2 films, both Ge and Se show a contraction in the nearest neighbor distances by illumination. Ordering of the structure (a decrease in the Debye Waller factor) is seen with illumination in both the compositions. a-As2S3 films show larger photo-induced changes and also a larger transient part in the changes as compared to a-GeSe2 films, which is suggested to be due to a more 3d rigid structure in GeSe2. Larger changes are seen around the chalcogen atom as compared to As and Ge atoms. From the results, we are able to confirm photo-expansion in As2S3 films and photo-contraction in GeSe2 at an atomistic level. (C) 2008 Elsevier B.V. All rights reserved.
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