Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 354, Issue 17, Pages 1926-1931Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2007.10.024
Keywords
amorphous semiconductors; II-VI semiconductors; diffraction and scattering measurements; X-ray diffraction; films and coatings; sputtering; measurement techniques; optical spectroscopy; microstructure; microcrystallinity; special glasses and materials; indium tin oxide and other transparent conductors; X-rays
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Zinc oxide (ZnO) film was deposited on a glass substrate by rf magnetron sputtering with O-2/Ar as working gases. Structural properties of the films were characterized by XRD. Average crystallite size in the films was strongly dependent on both the gas flow ratio of O-2/Ar and rf-power at a constant deposition pressure. During the deposition, energetic species in the plasma were in situ monitored using optical emission spectroscopy. An inverse correlation was observed between the average crystallite size and the emission intensity ratio of I-o*/I-Ar. Bombardment of atomic oxygen to the growing surface played an important role in determining the average crystallite size in the films. The average crystallite size could be controlled by the emission intensity ratio of I-o*/I-Ar. (C) 2007 Elsevier B.V. All rights reserved.
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