Related references
Note: Only part of the references are listed.Enhanced damage buildup in C+- implanted GaN film studied by a monoenergetic positron beam
X. F. Li et al.
JOURNAL OF APPLIED PHYSICS (2015)
Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals
J. Buckeridge et al.
PHYSICAL REVIEW LETTERS (2015)
Ga-vacancy induced room temperature ferromagnetism observed in N-irradiated GaN films
Juping Xu et al.
CHEMICAL PHYSICS LETTERS (2014)
Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams
Akira Uedono et al.
JOURNAL OF APPLIED PHYSICS (2014)
Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties
Jordan D. Greenlee et al.
JOURNAL OF APPLIED PHYSICS (2014)
Positron Annihilation Spectroscopy on Nitride-Based Semiconductors
Akira Uedono et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
Hiroshi Amano
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Defect identification in semiconductors with positron annihilation: Experiment and theory
Filip Tuomisto et al.
REVIEWS OF MODERN PHYSICS (2013)
Gallium nitride devices for power electronic applications
B. Jayant Baliga
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2013)
Group III-nitride lasers: a materials perspective
Matthew T. Hardy et al.
MATERIALS TODAY (2011)
Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
M. J. Wang et al.
APPLIED PHYSICS LETTERS (2009)
Activation of ion implanted Si in GaN using a dual AlN annealing cap
C. E. Hager et al.
JOURNAL OF APPLIED PHYSICS (2009)
Microstructural evolution in H ion induced splitting of freestanding GaN
O. Moutanabbir et al.
APPLIED PHYSICS LETTERS (2008)
Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams
A. Uedono et al.
JOURNAL OF APPLIED PHYSICS (2007)
Ab initio calculations of electric-field-induced stress profiles for diamond/c-BN (110) superlattices
Shoji Ishibashi et al.
PHYSICAL REVIEW B (2007)
Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN
KT Liu et al.
JOURNAL OF APPLIED PHYSICS (2005)
The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation
S Whelan et al.
JOURNAL OF APPLIED PHYSICS (2005)
Electrical activation characteristics of silicon-implanted GaN
Y Irokawa et al.
JOURNAL OF APPLIED PHYSICS (2005)
Luminescence properties of defects in GaN -: art. no. 061301
MA Reshchikov et al.
JOURNAL OF APPLIED PHYSICS (2005)
First-principles calculations for defects and impurities: Applications to III-nitrides
CG Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2004)
Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams
A Uedono et al.
JOURNAL OF APPLIED PHYSICS (2003)
Ga vacancies in electron irradiated GaN: introduction, stability and temperature dependence of positron trapping
K Saarinen et al.
PHYSICA B-CONDENSED MATTER (2001)
Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 μm in thickness
A Dadgar et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2000)
Share Paper
