Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 212, Issue 4, Pages 715-721Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201431777
Keywords
indirect band gap; infrared femtosecond laser; nanostructures; self-assembly; silicon; strain; thermoelectric effects
Funding
- KAKENHI [26630129]
- Grants-in-Aid for Scientific Research [26630129] Funding Source: KAKEN
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The periodic nanostructuring of inner part of semiconductors can be successfully accomplished by the infrared ultrashort pulse laser with a double pulse configuration. Self-organized nanostructures inside semiconductor could be induced empirically only if it is indirect band gap semiconductor. The strained silicon regions with a width of about 100nm are self-aligned parallel to the polarization direction of the first arriving pulses, despite of the polarization direction of the secondly arriving pulses. AFM inspections reveal that such strained silicon nanostructures exhibit high electric conductivity and low thermal conductivity. The formation mechanisms would be interpreted in terms of the electrostrictive force through the interaction between electron-hole plasma and phonon. Apart from the basic understanding, such nanostructured silicon will open the door to the fabrication of the self-contained thermoelectric devices.
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