Investigation of characteristic properties of Pr-doped SnO2 thin films

In the present work, an investigation study on the crystal structure, surface morphology, electrical conductivity and optical transparency of spray-deposited Pr-doped SnO2 was made as a function of Pr doping content. The X-ray diffraction studies indicated that the films were grown at the (211) preferential orientation. The values of crystallite size and strain were determined using Williamson-Hall method and they varied between 71.47 and 208.76nm, and 1.98x10(-3)-2.78x10(-3). As seen from Scanning Electron Microscope micrographs, the films were composed of homogenous dispersed pyramidal-shaped grains. The n-type conductivity of films was confirmed with Hall Effect measurements, and the best electrical parameters were found for 3at.% Pr doping level. The highest optical band gap and transmittance values were observed for undoped SnO2 sample. The highest figure of merit (phi), which is a significant parameter to interpret the usage efficiency of conductive and transparent materials in the optoelectronic and solar cell applications, was calculated to be 2.85x10(-5)ohm(-1) for 1at.% Pr doping content. As a result of this study, it may be concluded that Pr-doped SnO2 films with above properties can be used as a transparent conductor in various optoelectronic applications.