Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 14, Issue 7, Pages 5335-5341Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2014.8689
Keywords
Lead Zirconate Titanate (PZT) Thin Film; Pulsed Laser Deposition; Spectroscopic Ellipsometry; Optical Constants
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Pulsed laser deposition method was employed to grow nanostructured Pb(Zr0.52Ti0.48)O-3 (PZT) thin film on Si(100) substrate. The structural and morphological properties of the thin film were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively. Optical properties of PZT thin film were studied using spectroscopic ellipsometry (SE) and a four layer model was applied. Spectra of ellipscn-netric parameters such as psi and Delta were measured as a function of energy at room temperature. The refractive index (n), extinction coefficient (k), absorption coefficient (alpha) and the dielectric constants (epsilon(r), and epsilon(i)) of the thin film were obtained as a function of wavelength (200 to 900 nm range). The energy gap (E-g) of the PZT thin film was estimated to be 3.65 eV. The thickness of the thin films was determined by the ellipsometric data (524 nm) and grain size is found to be in the range of 50-100 nm.
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