Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 12, Issue 10, Pages 7619-7627Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2012.6651
Keywords
Ferroelectric; Memory; FeRAM; FeFET; Pb(Zr,Ti)O-3; SrBi2Ta2O9; BiFeO3
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Funding
- WCU (World Class University) program through the NRF (National Research Foundation)
- Ministry of Education, Science and Technology, Republic of Korea [R31-2008-000-10057-0]
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Ferroelectric random access memory (FeRAM) is a nonvolatile memory, in which data are stored using hysteretic P-E (polarization vs. electric field) characteristics in a ferroelectric film. In this review, history and characteristics of FeRAMs are first introduced. It is described that there are two types of FeRAMs, capacitor-type and FET-type, and that only the capacitor-type FeRAM is now commercially available. In chapter 2, properties of ferroelectric films are discussed from a viewpoint of FeRAM application, in which particular attention is paid to those of Pb(Zr,Ti)O-3, SrBi2Ta2O9, and BiFeO3. Then, cell structures and operation principle of the capacitor-type FeRAMs are discussed in chapter 3. It is described that the stacked technology of ferroelectric capacitors and development of new materials with large remanent polarization are important for fabricating high-density memories. Finally, in chapter 4, the optimized gate structure in ferroelectric-gate field-effect transistors is discussed and experimental results showing excellent data retention characteristics are presented.
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