Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 12, Issue 4, Pages 3101-3107Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2012.5823
Keywords
Nanowire; Ga2O3; Growth Mechanism; Elemental Distribution; Chemical Vapor Deposition; Microstructure
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Funding
- Defense Threat Reduction Agency [HDTRA1-10-1-0001]
- U.S Department of Energy [DOE DE-FG02-00ER45805]
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Long beta-Ga2O3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown beta-Ga2O3 nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline beta-Ga2O3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into beta-Ga2O3 nanowire stems several ten nanometers. A solid diffusion growth mechanism is proposed based on the spatial elemental distribution along the beta-Ga2O3 nanowires at nanoscale.
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