4.1 Article

Al-doped ZnO aligned nanorod arrays: significant implications for optic and opto-electronic applications

Journal

JOURNAL OF NANOPHOTONICS
Volume 6, Issue -, Pages -

Publisher

SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.JNP.6.063507

Keywords

aligned nanostructures; optical properties; photo-current; semiconductor materials

Funding

  1. DoD (CEAND) (US Army Research Office) [W911NF-11-1-0209]
  2. NSF-CREST (CNBMD) [HRD 1036494]
  3. NSF-RISE-HRD [0931373]

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We investigated the optical and optoelectronic properties of vertically aligned Al:ZnO nanorod arrays synthesized by the hydrothermal technique at a considerably low temperature on a sputtered Al: ZnO seed layer. The nanorod arrays maintained remarkable alignment along the c-axis over a large area. The seed layers and nanorod arrays showed various optical band gaps. Investigation of the optoelectronic properties of nanorod arrays on Al: ZnO/p-Si seed layer with SiO2 revealed that the photocurrent is significantly reduced in nanorod arrays on a AZO/SiO2/p-Si heterojunction due to multiple scattering phenomena associated with nanorod arrays. This research may open up venues for various optical and opto-electronic applications where highly aligned nanostructures are desired. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JNP.6.063507]

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